IRFP4668 N-Channel Power MOSFET
The IRFP4668 is a high-performance HEXFET® Power MOSFET engineered for high-power switching and industrial applications. With an exceptionally low on-resistance and high current handling capacity, it is the ideal choice for heavy-duty DC motor drives, high-efficiency inverters, and SMPS designs.
Core Technical Specifications
| Parameter | Value |
|---|---|
| Drain-to-Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 130A (at Tc = 25°C) |
| Pulsed Drain Current (Idm) | 520A |
| Static Rds(on) (Typical) | 8.0 mΩ |
| Total Gate Charge (Qg) | 161 nC |
| Max Power Dissipation (Pd) | 520W |
| Package Type | TO-247AC |
Key Features
- Ultra-Low On-Resistance: Minimizes conduction losses and heat generation.
- High Ruggedness: Improved avalanche and dynamic dV/dt ruggedness for hard-switching environments.
- Enhanced Body Diode: High dI/dt capability for efficient synchronous rectification.
- Wide Temperature Range: Operates up to 175°C, suitable for demanding industrial conditions.
Common Applications
- Uninterruptible Power Supplies (UPS)
- High-Current DC Motor Controllers
- Solar Inverters and Power Converters
- Synchronous Rectification in SMPS
Note: Due to the high gate charge (161nC), it is recommended to use a robust gate driver circuit to ensure efficient switching speeds and thermal stability in high-frequency designs.