The BYD160T75SD/BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast-recovery anti-parallel diode, making it suitable for high-speed switching applications.
Key Specifications:
- Collector-Emitter Voltage (V<sub>CES</sub>): 750V
- Collector Current (I<sub>C</sub>): 160A
- Package Type: TO-247 Plus
For detailed information, refer to the BGM160T75SD datasheet.