Description:
The PD020065EP_G is a Silicon Carbide (SiC) Schottky barrier diode rated for 650V and 20A, packaged in a 2-lead TO-220-2 through-hole outline with a metal mounting tab for heatsinking. As a wide-bandgap SiC device, it offers substantial performance advantages over conventional silicon rectifiers — most notably, near-zero reverse recovery charge, which dramatically reduces switching losses in high-frequency circuits.
Because of its temperature-independent switching behavior and negligible reverse recovery, this diode is particularly well suited to power factor correction (PFC) stages, boost converters, and other hard-switching power topologies where a standard silicon diode would introduce significant losses and heat. Its high forward surge current capability and stable performance at elevated junction temperatures (up to 175°C) make it a reliable choice for demanding power electronics designs.
The TO-220-2 package is a compact, non-isolated through-hole outline with a metal tab for direct heatsink mounting, ideal for moderate-to-high power applications where efficient thermal management is required.
Key Specifications:
- Type: Silicon Carbide (SiC) Schottky Barrier Diode
- Device Marking: PD020065EP_G
- Reverse Voltage (VRRM): 650V
- Forward Current (IF): 20A
- Reverse Recovery Charge: Near-zero (negligible Qrr)
- Max Junction Temperature: 175°C
- Package Type: TO-220-2 (2-Pin, Through Hole, Non-Isolated Tab)
Applications:
Power factor correction (PFC), boost/DC-DC converters, switch-mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and industrial motor drives.
Package Includes:
- 1 x PD020065EP_G SiC Schottky Diode (TO-220-2)