Description
Marked "P05N08G" on the package with an "E" logo, this part number matches the BLP05N08G family (commonly manufactured by Shanghai Belling under the "BL" brand, though your part's "E" logo suggests it may be from a different fab or a licensed/second-source manufacturer using the same base part number — worth double-checking against the exact logo). The P05N08G is an N-channel Enhanced Power MOSFET built using advanced double trench technology, which reduces conduction loss, improves switching performance, and enhances avalanche energy — a design well suited for motor driver and high-speed switching applications.
The TO-220 package with the standard 3-pin (Gate–Drain–Source) through-hole layout is typical of this device family, used widely in battery management systems (BMS), motor control, and DC-DC step-down converter designs.
Key Specifications
- Type: N-Channel Enhancement Mode Power MOSFET (double trench)
- Manufacturer: Marking matches Belling BLP05N08G family (confirm exact fab from logo)
- Package Marking: P05N08G
- Package: TO-220, 3-pin, through-hole
- Drain-Source Voltage (VDS): 85V
- Drain Current (ID): 120A
- Gate-Source Voltage (VGS): ±20V max
- Gate Threshold Voltage (Vgs(th)): 4V max
- RDS(ON), max: 0.005Ω (5mΩ)
- Total Gate Charge (Qg): 80nC
- Max Junction Temperature: 150°C
- Power Dissipation: 173.6W
Common Applications
- Motor drivers
- High-speed switching application
- Step-down (buck) DC-DC converters
- Battery management systems (BMS)
Package Includes
- 1 x P05N08G N-Channel Power MOSFET