Product Description:
The FGY160T65SPD-F085 is a high-performance Field-Stop Trench IGBT designed for demanding industrial and automotive applications. Rated at 650 volts and 160 amps, it combines low conduction loss with high-speed switching and excellent thermal efficiency. It also integrates a soft, fast-recovery diode for enhanced performance in half-bridge and inverter circuits.
Engineered for reliability and efficiency, this IGBT offers low saturation voltage, fast switching, and rugged short-circuit capability. It is AEC-Q101 qualified, making it a dependable choice for automotive powertrain systems, industrial inverters, EV charging stations, and motor drives.
Key Features:
-
Collector-Emitter Voltage: 650V
-
Collector Current: 160A continuous, 240A max at 25°C
-
Pulsed Collector Current: Up to 480A
-
Saturation Voltage (V<sub>CE(sat)</sub>): Typically 1.6V at 160A
-
Gate-Emitter Voltage: ±20V (Threshold ~5V)
-
Maximum Junction Temperature: 175°C
-
Switching Speeds:
-
Turn-on Delay: ~53ns
-
Turn-off Delay: ~98ns
-
Rise/Fall Time: ~197ns / ~141ns
-
-
Switching Energy:
-
Turn-on Energy: ~12.4mJ
-
Turn-off Energy: ~5.7mJ
-
-
Power Dissipation: Up to 882W
-
Thermal Resistance (R<sub>θJC</sub>): 0.17°C/W
-
Built-in Diode: Soft and fast recovery
-
Package Type: TO-247-3LD
Typical Applications:
-
EV powertrains and electric vehicle inverters
-
Industrial motor drives
-
UPS systems
-
Welding machines
-
High-efficiency DC/AC power conversion
-
Battery charging stations (EV chargers)
The package includes:
1 x Onsemi 160A 650V FGY160T65SPD Onsemi IGBT