Description:
The NCE65T180F is an N-Channel Super Junction Power MOSFET manufactured by NCE Power Semiconductor, built using advanced trench-gate super junction technology. This design delivers excellent low on-resistance and low conduction losses, along with an ultra-low gate charge that reduces driving requirements and improves overall switching performance.
Rated at 650V, this MOSFET is engineered to meet the demanding needs of AC-DC switch-mode power supplies (SMPS), making it well-suited for power factor correction (PFC), AC/DC power conversion, and general industrial power applications. It is 100% avalanche tested for ruggedness and is fully RoHS compliant.
The device is housed in a TO-220F (fully insulated) package, which allows direct mounting to a heatsink without requiring a separate insulating pad — a practical advantage in compact, high-density power supply designs.
Key Specifications:
- Manufacturer: NCE Power Semiconductor
- Part Number: NCE65T180F
- Type: N-Channel Super Junction MOSFET
- Drain-Source Voltage (VDS): 650V
- RDS(ON) Max: 180 mΩ
- Drain Current (ID): 21A
- Package Type: TO-220F (Isolated, 3-Pin, Through Hole)
- Certification: RoHS Compliant, 100% Avalanche Tested
Applications:
Power factor correction (PFC), switch-mode power supplies (SMPS), AC/DC power conversion, and industrial power electronics.
Package Includes:
- 1 x NCE Power NCE65T180F N-Channel MOSFET (TO-220F)