These 12N60 N-Channel Power Mosfet, 600V, 0.8 field-effect transistors (MOSFET) are produced using UTC’s proprietary, planar stripe, DMOS technology. 12N60 is simply a three-terminal silicon device with, high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time. This advanced technology is specially tailored to reduce and minimize on-state resistance while providing high rugged avalanche characteristics, and reliable, and fast switching performance. These devices are compatible for speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters, and bridge circuits based n half-bridge topology. Moreover, 12N60 features minimum Lot-to-Lot variations for robust device performance and reliable operation.
12N60 N-Channel Mosfet Transistor manufactured in TO-220F package that is universally accepted for all commercial-industrial applications. 12N60 provides a Drain Source Voltage of 600V at a drain current of 0.8A. These MOSFET Transistors are designed explicitly to achieve extremely low on-resistance per silicon area and lower gate charge performance. This feature makes this device ideal for use as a primary switch in advanced high-efficiency isolated DC-DC converters.
A MOSFET designed as a special type of metal–oxide–semiconductor field-effect transistor (MOSFET) explicitly to handle significant power levels. This N-Channel MOSFET defined as a type of MOSFET made up of a majority of electrons as current carriers. When the MOSFET activated and is on, the majority of the current flowing are electrons moving through the channel. It is one of the prominent power semiconductor device in world, due to its low gate drive power, wide bandwidth. This makes it ideal for use in wide range of applications such as in low-voltage (less than 200V) switch.