Description
Marked "800R450" with a triangular logo containing an "M" and "PDG" beneath it, this matches MagnaChip's MMF80R450P family of super junction MOSFETs, which use the "80R450" style marking convention (800V, RDS(ON) ≈ 0.45Ω) that MagnaChip datasheets confirm directly. The MMF(U)80R450P is a power MOSFET using MagnaChip's advanced super junction technology that achieves very low on-resistance and gate charge, providing much higher efficiency through optimized charge coupling technology. These user-friendly devices offer designers the advantage of low EMI as well as low switching loss. Features include low power loss through high-speed switching and low on-resistance, 100% avalanche testing, and a green package with Pb-free plating and halogen-free construction.
Key Specifications (per MagnaChip MMF80R450P/PB family datasheet)
- Type: N-Channel Enhancement Mode Super Junction Power MOSFET
- Manufacturer: MagnaChip Semiconductor
- Package Marking: 800R450 (variant of standard "80R450" marking convention)
- Package: TO-220F, isolated, 3-pin, through-hole
- Drain-Source Voltage (VDSS): 800V (min)
- Drain Current (ID): 11A @ TC=25°C
- RDS(ON): 0.45Ω max @ VGS=10V
- Max VDS @ Tj: 850V
- Compliance: Pb-free, halogen-free (green package)
Common Applications
- Motor drive circuits
- DC-DC converters
- Power switch applications
- Offline SMPS and high-voltage switching designs
Package Includes
- 1 x MagnaChip MMF80R450P N-Channel Super Junction MOSFET (TO-220F)