This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
| Type | Power MOSFET |
| Number of Elements | 1 |
| Polarity | N |
| Channel Mode | Enhancement |
| Drain-Source On-Res | 1.4Ohm |
| Drain-Source On-Volt | 900V |
| Gate-Source Voltage (Max) | ±30V |
| Continuous Drain Current | 9A |
| Power Dissipation | 150W |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Mounting | Through Hole |
| Pin Count | 3 +Tab |
| Package Type | TO-3PN |
| Packaging | Tape and Reel |
Package Include:
1xK2611