IRFP150A Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Te chnology Lower Input Capacitance Improv ed Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
032 Ω (Typ.
) Ο IRFP150A BVDSS = 100 V RDS(on) = 0.
04 Ω ID = 43 A TO-3P 1 2 3 1.
Gate 2 .
Drain 3.
Source Absolute Maximum Rat ings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic D rain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 43 30.
4 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Dra .
