Irf740 n Channel Power Mosfet

SKU: B224,L10,Th5
Regular price
Rs 100
Sale price
Rs 100
Regular price
Rs 0
Sold out
Unit price
Quantity must be 1 or more

IRF740 MOSFET - N-Channel Transistor IRF740 is type of N-Channel enhancement mode power field effect transistors which are using planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation.

The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU.

IRF740 N-Channel Power MOSFET

The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.

One considerable disadvantage of the IRF740 Mosfet is its high on-resistance (RDS) value which is about 0.55 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.

Features

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 10A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 400V
  • Drain Source Resistance (RDS) is 0.55 Ohms
  • Rise time and fall time is 27nS and 24nS
  • Available in To-220 package

Applications

  • Switching high power devices
  • Inverter Circuits
  • DC-DC Converters
  • Control speed of motors
  • LED dimmers or flashers
  • High Speed switching applications