Description
The IDP08E65D2 (marked E08ED2 on the package) is an Emitter-Controlled Rapid Switching Diode from Infineon Technologies, rated for 650V, 8A, with a forward voltage of 1.6V at 25°C and a maximum junction temperature of 175°C. It's housed in Infineon's PG-TO220-2-1 through-hole package, with a 2-lead configuration for easy PCB and heatsink mounting.
Built using Infineon's emitter-controlled diode technology, these diodes provide a good balance of low forward voltage and soft reverse-recovery characteristics, offering low conduction losses and favorable EMI behavior. This makes the E08ED2 particularly well suited as a boost diode in Continuous Conduction Mode (CCM) Power Factor Correction (PFC) circuits — its primary designed application — as well as other high-frequency switching power applications.
Key Specifications
- Type: Rapid Switching Emitter-Controlled Diode
- Manufacturer: Infineon Technologies
- Package Marking: E08ED2
- Package: PG-TO220-2-1 (2-lead, through-hole)
- Repetitive Peak Reverse Voltage (Vrrm): 650V
- Forward Current (If): 8A
- Forward Voltage (Vf) @ Tvj = 25°C: 1.6V
- Max Junction Temperature (Tvjmax): 175°C
Common Applications
- Boost diode in CCM PFC (Power Factor Correction) circuits
- High-frequency switching power supplies
- Motor drive and industrial power conversion systems
Package Includes
- 1 x Infineon IDP08E65D2 (E08ED2) Diode