HY1920 MOSFET NEW N-Channel Power Transistor

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HY1920 MOSFET - High-Performance N-Channel Power Transistor

The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage and 90A current handling, making it suitable for motor control, power supplies, and industrial switching applications.

Key Features

  • Drain-to-Source Voltage (V): 200V
  • Continuous Drain Current (I): 90A
  • Maximum Power Dissipation: 375W
  • Low R for efficient switching

Learn More About HY1920 MOSFET

Explore detailed specifications and datasheets for the HY1920 MOSFET on the following site:

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Package Includes

  • 1 x HY1920 N-Channel MOSFET