Description
Marked "HCS70R360S" on the package, this is Huacan Semiconductor's HCS70R360S, part of their 700V Super Junction power MOSFET family. It is an N-channel enhancement mode power transistor engineered using advanced super junction technology to achieve low on-resistance ($R_{DS(ON)}$) and optimized gate charge ($Q_g$) performance.
It is housed in an isolated TO-220F package, which provides electrical isolation for easy heat-sink mounting and thermal management in high-voltage, high-efficiency power converters.
Key Specifications
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Type: N-Channel Enhancement Mode Super Junction Power MOSFET
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Manufacturer: Huacan Semiconductor
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Package Marking: HCS70R360S
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Package: TO-220F (Isolated 3-pin through-hole)
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Drain-Source Voltage ($V_{DSS}$): 700V
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Drain Current ($I_D$): 11A (Continuous, $T_C = 25^\circ\text{C}$)
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Pulsed Drain Current ($I_{DP}$): 33A
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Gate-Source Voltage ($V_{GSS}$): $\pm 30\text{V}$ max
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Gate Threshold Voltage ($V_{GS(th)}$): 2.5V to 4.5V
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$R_{DS(ON)}$, max: $0.360\,\Omega$ ($360\,\text{m}\Omega$) at $V_{GS} = 10\text{V}$
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Power Dissipation ($P_D$): 31W
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Max Junction Temperature: 150°C
Common Applications
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Switch-Mode Power Supplies (SMPS)
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Power Factor Correction (PFC) stages
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LED lighting drivers and ballast power supplies
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Auxiliary power supplies for industrial equipment and consumer electronics
Package Includes
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1 x Huacan Semiconductor HCS70R360S N-Channel Power MOSFET (TO-220F)