G60N100 IGBT: A Powerful and Versatile Solution
The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the G60N100 is an ideal choice for a wide range of applications, including:
- Motor control
- Power supplies
- Inverters
- Solar power systems
- Uninterruptible power supplies (UPS)
Key Benefits of the G60N100 IGBT
- Fast switching speed for efficient power conversion
- High current capacity to handle demanding loads
- Low on-state voltage for reduced power losses
- Rugged construction for reliability and durability
- Wide operating temperature range for versatile applications
Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (V) | 600 V |
| Collector Current (I) | 100 A |
| Collector-Emitter Saturation Voltage (V) | 1.8 V (typ) |
| Input-Output Capacitance (C) | 1500 pF |
| Junction Temperature (T) | -40°C to +150°C |
Package Includes
- 1 x G60N100 IGBT Transistor