Description:
The FQPF3N80C is an N-channel QFET enhancement-mode power MOSFET built using planar stripe and DMOS technology, engineered to reduce ON-state resistance while delivering strong switching performance and high avalanche energy strength. It's well suited for switched-mode power supplies, active power factor correction (PFC) circuits, and electronic lamp ballasts.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Fairchild Semiconductor (now onsemi) |
| Part Number | FQPF3N80C |
| Type | N-Channel MOSFET |
| Package | TO-220F (isolated tab, 3-pin) |
| Drain-Source Voltage (VDS) | 800V max |
| Continuous Drain Current (ID) | 3A |
| RDS(on) | 4.8Ω max @ VGS = 10V, ID = 1.5A |
| Gate-Source Voltage (VGS) | 30V max |
| Gate Threshold Voltage (VGS(th)) | 5V max |
| Power Dissipation (Pd) | 39W max |
| Gate Charge | Typ. 13nC (low gate charge) |
| Reverse Transfer Capacitance (Crss) | Typ. 5.5pF (low Crss) |
| Avalanche Rating | 100% avalanche tested |
Common Applications
- Switch-mode power supplies (SMPS)
- Electronic ballasts
- High-voltage switching circuits
- Active power factor correction (PFC)
Package Includes
- 1 x Fairchild FQPF8N80C N-Channel MOSFET (TO-220F)