The HH75n120HA is a high-speed switching third-generation Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. Its key specifications include:
| Specification | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 150 A (25°C), 75 A (134°C) |
| Pulsed Collector Current (ICpuls) | 300 A |
| Gate-Emitter Voltage (VGE) | ±20 V (continuous), ±30 V (transient) |
| Power Dissipation (Ptot) | 938 W (25°C), 256 W (134°C) |
| Operating Junction Temperature (Tvj) | -40°C to +175°C |
- Collector-Emitter Voltage (V<sub>CES</sub>): 1200 V
- Continuous Collector Current (I<sub>C</sub>):
- 150 A at T<sub>C</sub> = 25°C
- 75 A at T<sub>C</sub> = 134°C
- Pulsed Collector Current (I<sub>Cpuls</sub>): 300 A
- Gate-Emitter Voltage (V<sub>GE</sub>):
- ±20 V (continuous)
- ±30 V (transient, ≤10 µs, D < 0.010)
- Short Circuit Withstand Time (t<sub>SC</sub>): 10 µs at V<sub>GE</sub> = 15 V, V<sub>CC</sub> ≤ 600 V, T<sub>vj</sub> = 175°C
- Power Dissipation (P<sub>tot</sub>):
- 938 W at T<sub>C</sub> = 25°C
- 256 W at T<sub>C</sub> = 134°C
- Operating Junction Temperature (T<sub>vj</sub>): -40°C to +175°C
- Thermal Resistance Junction-to-Case (R<sub>th(j-c)</sub>):
- IGBT: 0.16 K/W
- Diode: 0.28 K/W
- Collector-Emitter Saturation Voltage (V<sub>CEsat</sub>):
- 2.00 V (typical) at T<sub>vj</sub> = 25°C, I<sub>C</sub> = 75 A
- 2.50 V (typical) at T<sub>vj</sub> = 175°C, I<sub>C</sub> = 75 A
- Gate-Emitter Threshold Voltage (V<sub>GE(th)</sub>): 5.8 V (typical) at I<sub>C</sub> = 2.6 mA, V<sub>CE</sub> = V<sub>GE</sub>
- Switching Characteristics at T<sub>vj</sub> = 25°C:
- Turn-On Delay Time (t<sub>d(on)</sub>): 38 ns
- Rise Time (t<sub>r</sub>): 32 ns
- Turn-Off Delay Time (t<sub>d(off)</sub>): 303 ns
- Fall Time (t<sub>f</sub>): 32 ns
- Total Switching Energy (E<sub>ts</sub>): 6.30 mJ
- Switching Characteristics at T<sub>vj</sub> = 175°C:
- Turn-On Delay Time (t<sub>d(on)</sub>): 38 ns
- Rise Time (t<sub>r</sub>): 35 ns
- Turn-Off Delay Time (t<sub>d(off)</sub>): 400 ns
- Fall Time (t<sub>f</sub>): 68 ns
- Total Switching Energy (E<sub>ts</sub>): 12.10 mJ