60A 1000V IGBT G60N100 NPT Trench IGBT with Soft Recovery Diode, TO-264 Package
🧩 Product Description
The FGL60N100BNTD, also known as G60N100, is a high-voltage, high-current NPT trench IGBT (Insulated Gate Bipolar Transistor) with an integrated ultra-fast soft recovery diode. It is designed for hard-switching applications requiring high reliability, efficiency, and ruggedness, such as inverters, UPS systems, welding equipment, and industrial power converters.
With a 1000V blocking voltage, 60A continuous current, and pulsed rating up to 200A, this IGBT is ideal for demanding switching environments. The TO-264 (TO-3PL) package offers excellent thermal handling for high-power assemblies.
⚙️ Key Specifications
| Parameter | Value |
|---|---|
| Collector–Emitter Voltage (V<sub>CES</sub>) | 1000 V |
| Continuous Collector Current (I<sub>C</sub>) | 60 A @ 25 °C |
| Pulsed Collector Current (I<sub>CM</sub>) | 200 A |
| Gate–Emitter Voltage (V<sub>GE</sub>) | ±25 V |
| Saturation Voltage (V<sub>CE(sat)</sub>) | Typ. 2.5 V @ 60 A |
| Gate Threshold Voltage (V<sub>GE(th)</sub>) | 4.0 – 7.0 V |
| Diode Forward Voltage (V<sub>F</sub>) | ~1.8 V @ 60 A |
| Turn-On Delay Time | ~140 ns |
| Turn-Off Delay Time | ~630 ns |
| Total Gate Charge (Q<sub>g</sub>) | ~275 nC |
| Power Dissipation | 180 W @ 25 °C |
| Thermal Resistance (R<sub>θJC</sub>) | 0.69 °C/W |
| Junction Temperature Range (T<sub>j</sub>) | –55 °C to +150 °C |
| Package | TO‑264 / TO‑3PL (3-pin) |
✅ Features & Benefits
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High voltage handling up to 1000V
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Low conduction losses with V<sub>CE(sat)</sub> ~2.5V
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Built-in ultra-fast diode for efficient half-bridge operation
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Reliable switching performance under high surge and thermal stress
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NPT trench structure for enhanced ruggedness and soft switching
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Excellent for use in parallel configurations
🛠️ Typical Applications
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UPS (Uninterruptible Power Supply) systems
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Welding machines and induction heaters
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Motor drives and industrial inverters
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High-frequency power supplies
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General-purpose DC–AC conversion